Taiwan NTHU goes ahead to make MRAM breakthrough
E190315Y5 | Apr. 2019（E233）
A cross-disciplinary team, based at National Tsing Hua University of Taiwan, led by Prof. LAI Chih-Huang, dean of College of Engineering of National Tsing Hua University and also Prof. LIN Hsiu-Hau of Department of Physics, has successfully developed a new core technology of magnetic random access memory (MRAM) which works by using a spin current caused by the electrons to manipulate their exchange bias of a nanometer layer of platinum under the ferromagnetic and antiferromagnetic layers. This technology will expand memory space and the information stored will remain intact in case of power outage. Mobile phones or tablet PCs equipped with MRAM technology can stay on standby mode for a time period for at least one time longer. Prof. Lai and Prof. Lin’s research findings have been published in the periodical, Nature Materials.
Prof. Lin explains how MRAM works. Electrons have both charge and spin. Spin of electrons would cause extremely tiny magnetic moment similar to thousands of micro magnets on wafer and work to record the signal of zero and one. Electric power will not be required when calculation is not processing, and information stored will remain intact and stable even in case of power outage.
This research has been recognized by the top periodical of the academic world, thus to stand out as a revolutionary breakthrough and also to present a new vision in spintronics. (March 2019)